| PART |
Description |
Maker |
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| UPD29F800ALGZ-C15B-MJH UPD29F800ALGZ-C15T-MJH UPD2 |
XWAY™ TANTOS
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information | Information[10/2002]
EEPROM|FLASH|512KX16/1MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | TSSOP封装| 48PIN |塑料
|
NEC, Corp.
3M Company
|
| IS43R16800A-6TL IS43R16800A-6T IS43R16800A-6 |
8Meg x 16 128-MBIT DDR SDRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IC42S16800D-7TL IS42S81600D-6T IS42S81600D-6TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| KM23C8100DET KM23C8100ET |
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C8105ET KM23C8105DET KM23C8105DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| UT7164-55PCA6 UT7164-55PSA6 UT7164-85PCC6 UT7164-5 |
Combo Memory 2M x 16 Flash 256kx16 SRAM 3.3v 56FBGA
Combo Memory 2M x 16 Flash 512kx16 SRAM 3.3v 56FBGA Tray
Combo Memory 4M x 16 Flash 512kx16/1mx8 SRAM 3.3v 73FBGA Tray
x8 SRAM x8的SRAM
|
ITT, Corp.
|
| K6T8016C3M K6T8016C3M-B K6T8016C3M-F K6T8016C3M-RB |
512Kx16 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
| WSF512K16-72H2IA WSF512K16-72H2M WSF512K16-72H2MA |
512KX16 SRAM/FLASH MODULE, SMD 5962-96901
|
WEDC[White Electronic Designs Corporation]
|
| M29F800AT55M1 |
EEPROM,FLASH,512KX16/1MX8,CMOS,SOP,44PIN,PLASTIC
From old datasheet system
|
ST Microelectronics
|
